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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

DC/DC Flyback

Similar to booster converters in architecture and performance the simple flyback converter topology uses a mutually coupled inductor to store energy when current passes through and releasing the energy when the power is removed. However, the primary winding of the transformer replaces the inductor while the secondary provides the output. In the flyback configuration, the primary and secondary windings are utilized as two separate inductors.

Block diagram

設計考慮因素

  • 開始采用PWM驅動無刷直流電機控制
  • 電機驅動MOSFET必須以低RDSon和良好的熱阻抗來滿足峰值高電流需求
  • 如果過載情況會降低電池和柵極電壓,則可能需要具有強線性模式性能的MOSFET來提供反向電池保護
  • MOSFET可能需要滿足UL2595等的具體間距要求
  • 為小尺寸優(yōu)化的電荷平衡MOSFET,通常裝在可移動電池組中——每個電池一個

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

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